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Method For Polysilicon Profile Control Using CVD Oxide And Reactive Ion Etching Disclosure Number: IPCOM000068253D
Original Publication Date: 1979-Dec-01
Included in the Prior Art Database: 2005-Feb-20

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Related People

Eames, WS Friedman, JD [+details]


Using a combination of a CVD (chemical vapor deposition) oxide layer on top of the polysilicon, and reactive ion etching (RIE) both layers in a CF(4) plasma allows the sidewall profile of the polysilicon to be tailored by adjusting the etching parameters.