Browse Prior Art Database

Method For Polysilicon Profile Control Using CVD Oxide And Reactive Ion Etching

IP.com Disclosure Number: IPCOM000068253D
Original Publication Date: 1979-Dec-01
Included in the Prior Art Database: 2005-Feb-20

Publishing Venue

IBM

Related People

Authors:
Eames, WS Friedman, JD [+details]

Abstract

Using a combination of a CVD (chemical vapor deposition) oxide layer on top of the polysilicon, and reactive ion etching (RIE) both layers in a CF(4) plasma allows the sidewall profile of the polysilicon to be tailored by adjusting the etching parameters.