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Reclaiming Poor PtSi Wafers

IP.com Disclosure Number: IPCOM000068254D
Original Publication Date: 1979-Dec-01
Included in the Prior Art Database: 2005-Feb-20

Publishing Venue

IBM

Related People

Authors:
DiAngelo, DW Emmons, DF Longo, R Schnitzel, RH [+details]

Abstract

Wafers having poor or unwanted PtSi in their contacts are normally scrapped. Such wafers can be reclaimed since about 400 angstroms of Si in the contacts can be removed. The process used in the rework is as follows: 1. Ion mill to remove SiO(2) on top of the PtSi, using standard ion mill parameters. 2. Use standard aqua regia etch to remove PtSi. 3. Apply hot H(2)SO(4) to remove any residue chlorides. 4. Ion mill again to remove any SiO(2) from the contacts that may have been formed from etching and H(2)SO(4) steps.