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Silicon On Polysilicon With Deep Dielectric Isolation

IP.com Disclosure Number: IPCOM000068261D
Original Publication Date: 1979-Dec-01
Included in the Prior Art Database: 2005-Feb-20

Publishing Venue

IBM

Related People

Authors:
Abbas, SA [+details]

Abstract

This article combines the technique of using thick polysilicon carriers and the technique of etching deep trenches with vertical walls that are filled with oxide and polysilicon. It is proposed that the deep trenches filled with polysilicon can be used as markers either visually or electrically to determine the endpoint for silicon removal. The advantage of thin silicon layers on top of thick polysilicon carriers is that there is significant protection against alpha particles due to the fact that lifetimes of the holes and electrons are extremely short in polysilicon. In addition, a considerable amount of recombination will take place at the interface between silicon and polysilicon.