Browse Prior Art Database

Fabrication Of V-MOS Or U-MOS Random Access Memory Cells With A Self-Aligned Word Line

IP.com Disclosure Number: IPCOM000068266D
Original Publication Date: 1979-Dec-01
Included in the Prior Art Database: 2005-Feb-20

Publishing Venue

IBM

Related People

Authors:
Chang, TS Ogura, S [+details]

Abstract

A self-aligned word line for V-MOS and U-MOS random-access memories decreases the cell areas, and lowers bit line capacitance and word line resistance.