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Fabrication Of V-MOS Or U-MOS Random Access Memory Cells With A Self-Aligned Word Line Disclosure Number: IPCOM000068266D
Original Publication Date: 1979-Dec-01
Included in the Prior Art Database: 2005-Feb-20

Publishing Venue


Related People

Chang, TS Ogura, S [+details]


A self-aligned word line for V-MOS and U-MOS random-access memories decreases the cell areas, and lowers bit line capacitance and word line resistance.