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After a silicon surface has been cleaned, there may be a thin SiO(2) layer on it.
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Removal Of Native Oxide Layer On A Semiconductor Surface
After a silicon surface has been cleaned, there may be a thin SiO(2) layer on
Exposure of the surface to HF/H(2)0 vapor (typically, approximately 15 - 20
percent HF) will change the SiO(2) layer into H(2)SiF(6) (liquid) plus H(2)O. If
the silicon is then (preferably, within a few minutes) inserted into a metal
evaporation system, a removal of a substantial amount of the H(2)SiF(6) will
occur during pump down.
This technique may be utilized when manufacturing Schottky barrier diodes.
One need merely insert the HF/H(2)O vapor exposure step in between the
standard surface cleaning and metal evaporation steps used in Schottky barrier