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A planar array of non-linear devices suitable for matrix addressing of display devices is described.
English (United States)
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Array Of Nonlinear Devices For Matrix Addressing Storage Device
A planar array of non-linear devices suitable for matrix addressing of display
devices is described.
The array of diodes is produced by ion implantation of P-type silicon with
arsenic and then thermally annealing specific areas to obtain a surface P-N
junction. A laser beam or an electron beam is used to anneal the implanted
layer. The annealed area can be in the form of isolated spots or other
noninterconnected pattern. The result of forming this pattern would be an array
of P-N junctions which are connected at the exposed surface by high resistivity
amorphous material. With the array coupled as one side of a liquid crystal cell,
and the P-N junctions reverse biased, the cell could be addressed optically since
the P-N junction reverse current is sensitive to light.
The display device can be matrix addressed by forming two implantations of
opposite type in high resistivity crystalline or polycrystalline substrate material 10,
as shown in the drawing. The deeper implantation 12 is in the form of lines after
beam anneal. The shallower implantation 14 is in the form of spots or isolated
areas along this line. To form this structure, the deeper implant is formed first
and then laser- or electron-beam annealed in lines. Then the shallower implant is
formed, and beam annealed along the same line. In forming the liquid crystal
cell, the lines of this diode-containing substrate are placed orthogonally with