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High Temperature Lift-Off Process

IP.com Disclosure Number: IPCOM000068380D
Original Publication Date: 1979-Dec-01
Included in the Prior Art Database: 2005-Feb-20

Publishing Venue

IBM

Related People

Authors:
Ahn, KY Cox, DE Kane, SM [+details]

Abstract

In a conventional lift-off process a resist pattern is formed a on sample by a suitable lithographic technique and metal is deposited uniformly over the entire patterned area. When the sample is immersed in an appropriate solvent, the undeveloped resist is removed along with all of the metal except that lying within the photoresist stencil. A metal pattern with polarity opposite to that of the original resist pattern is thereby created. Such a metallization technique has two main drawbacks: first, a suitable undercut must be created in the photoresist to prevent step coverage by the metal and to ensure penetration of the solvent into the unwanted resist and, second, since resist is susceptible to thermal degradation, the sample temperature during metallization must be kept as low as possible.