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Warped silicon wafers may result in poor manufacturing yields. Therefore, it is recommended that warped wafers be detected early in the process.
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Fast Method For On-Line Characterization Of Warped Silicon Wafers
Warped silicon wafers may result in poor manufacturing yields. Therefore, it
is recommended that warped wafers be detected early in the process.
A method is here proposed which allows the control of silicon wafer
deformation, both before and after the various heat treatments performed in a
deposition barrel-type reactor. The latter is currently used, for example, in
epitaxial or silicon nitride deposition steps.
With such a reactor, wafers are disposed on radial sectors of the truncated
cone-shaped susceptor (generally three wafers by sector). The wafers are
exposed to a linear fluorescent light which is in a direction parallel to the sector
surface. The light, after being reflected on the wafer, appears distorted to the
operator in case of a warped wafer. The tool may be optimized with a grid
between the source and the wafers, which increases the operator's comfort.
The system makes it possible to control all wafers without manual handling
during the deposition step.