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Simultaneous Doping Of Selective Silicon Areas With Boron Or Arsenic Disclosure Number: IPCOM000068400D
Original Publication Date: 1979-Sep-01
Included in the Prior Art Database: 2005-Feb-20

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Briska, M Schackert, K Thiel, KP [+details]


A mask consisting of a first oxide layer, a polysilicon layer, a boron source, and a second oxide layer is used to produce, under conventional arsenic capsule diffusion conditions, selective adjacent silicon areas containing boron and arsenic.