Browse Prior Art Database

Simultaneous Doping Of Selective Silicon Areas With Boron Or Arsenic

IP.com Disclosure Number: IPCOM000068400D
Original Publication Date: 1979-Sep-01
Included in the Prior Art Database: 2005-Feb-20

Publishing Venue

IBM

Related People

Authors:
Briska, M Schackert, K Thiel, KP [+details]

Abstract

A mask consisting of a first oxide layer, a polysilicon layer, a boron source, and a second oxide layer is used to produce, under conventional arsenic capsule diffusion conditions, selective adjacent silicon areas containing boron and arsenic.