Measuring Potential Steps In Semiconductors By Means Of Secondary Ions
Original Publication Date: 1979-Sep-01
Included in the Prior Art Database: 2005-Feb-20
In the ion probe apparatus of Fig. 1, signal current I, resulting from a selected species of secondary ions produced by a beam of primary ions impinging on a target, depends on potential V(T) applied to the target. This dependency is particularly pronounced if heavy secondary ions are chosen for measuring, for example, Si(4)+ for the analysis of silicon devices (Fig. 2).