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It is frequently desirable to alter the interconnections of a logic array or switch matrix. The optical memory system may be reversibly altered by electrochemical techniques.
English (United States)
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Optically Programmed Logic Array
It is frequently desirable to alter the interconnections of a logic array or
switch matrix. The optical memory system may be reversibly altered by
Photo-optical memory systems of the type illustrated in Fig. 1
have been described before, for example, in U. S. Patent 3,868,652.
Emphasis in this article is on the optical mask portion of such a
As shown, the system includes a photon source 1, mask 2 and photol array 3. Using the technology described in the article entitled "Electrically Alterable
Resistive Element" in the IBM Technical Disclosure Bulletin 17, 1284 (October,
1974), a mask is created which can be selectively altered to allow the passage of
light only through particular mask elements and inhibited from passing through
other elements by means of selectively plating an opaque metal film over the
Fig. 2 illustrates a mask which has been "programmed" to allow light to pass
(at the wavelength lambda) through selected mask elements, and not to allow it
to pass through other elements. Mask 2 includes a substrate 5 that is optically
transmissive at lambda. For example, silicon (Si) is infrared, transmissive
metallic copper (Cu degree) is not.
Substrate 5 also includes a reservoir electrode 6 of plating material Cu
degree. Address select lines 7 are used during mask alteration. A 4 x 4 array of
resistive mask elements 8 is provided on substrate 5 which has optical
transmission at the des...