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Charge Storage Device Fabrication Disclosure Number: IPCOM000068481D
Original Publication Date: 1978-Jan-01
Included in the Prior Art Database: 2005-Feb-20

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Chang, J Joshi, M Keshavan, B Silverman, R [+details]


This article describes a process for preparing high density MNOS read mostly random-access memory devices. The process requires the forming of an N-type epitaxial layer 10 over a P-type semiconductor body 11 into which P-type material is diffused to form isolation regions in the layer using oxide masking 12. Following the creation of these P-type isolation diffusions, N-type diffusants are diffused into the layer to form contact regions in the epitaxial layer.