Browse Prior Art Database

Ion Implanted MOSFET

IP.com Disclosure Number: IPCOM000068482D
Original Publication Date: 1978-Jan-01
Included in the Prior Art Database: 2005-Feb-20

Publishing Venue

IBM

Related People

Authors:
Bradbee, GR Oshelski, JT Peterson, DC [+details]

Abstract

This semiconductor process provides MOSFET (metal oxide semiconductor field-effect transistor) devices having improved density and yields, through the use of fewer process steps in combination with ion-implantation doping, over MOSFET devices processed by diffusion doping techniques. The process reduces sensitivity to participate defects since source/drain regions and field oxidation are formed in a single hot process step, thus reducing hot process cycling found in previous fabrication techniques. The number of cleaning steps is also significantly reduced.