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Reducing Interlevel Shorts in Sputtered Insulators

IP.com Disclosure Number: IPCOM000068518D
Original Publication Date: 1978-Jan-01
Included in the Prior Art Database: 2005-Feb-20

Publishing Venue

IBM

Related People

Authors:
Gartner, HM Hoeg, AJ Sarkary, HG Schnitzel, RH [+details]

Abstract

Many interlevel shorts in sputtered SiO(2) atop semiconductor substrates are due to metallic protrusions, such as aluminum, which run through the SiO(2). The protrusions, known as spikes, are shown in Fig. 1, wherein aluminum is deposited on the substrate, typically by means of a liftoff process.