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Schottky Barrier Diode Structure

IP.com Disclosure Number: IPCOM000068529D
Original Publication Date: 1978-Jan-01
Included in the Prior Art Database: 2005-Feb-20

Publishing Venue

IBM

Related People

Authors:
Anantha, NG Bhatia, HS Blusnavage, VA Hornung, A [+details]

Abstract

Schottky barrier diodes (SBDs) exhibit an instability which manifests itself as a thermally-activated, negative forward voltage change, which is accompanied by a large increase in leakage. This instability occurs under forward bias stress conditions. It is believed that localized ionic contamination of the SBD contact hole prior to the deposition of the first metal is the cause. When a forward voltage is applied, the ions move toward the silicon-SBD perimeter, thereby causing the instability. The mechanism is the forward voltage field introduced by metal which overlaps the SBD. By removing the overlapped metal, the mechanism is eliminated and, therefore, the instability.