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Dislocation Generation around Silicon Grooves

IP.com Disclosure Number: IPCOM000068530D
Original Publication Date: 1978-Jan-01
Included in the Prior Art Database: 2005-Feb-20

Publishing Venue

IBM

Related People

Authors:
Burkhardt, PJ [+details]

Abstract

Misfit dislocations are generated during thermal silicon dioxide growth as a result of in situ stresses at corners of a groove, as shown in the figure, wherein the silicon substrate is 1, the silicon dioxide layer is 2, and the dislocations emanating from the groove corners are 3. These stresses can be reduced by (1) reducing the oxide thickness and (2) increasing the oxidation temperature. In order to determine the thicknesstemperature threshold for dislocation generation, a matrix of three oxide thicknesses (2000 Angstroms, 5000 Angstroms and 8000 Angstroms) at three temperatures (900 Degrees C, 1000 Degrees C and 1100 Degrees C) was established using an E-beam generated grid pattern of grooves. Oxidations were done in steam. The samples were cleaved and decorated using an appropriate etchant.