Ion Implantation Gettering at Elevated Temperatures
Original Publication Date: 1978-Jan-01
Included in the Prior Art Database: 2005-Feb-20
It has been discovered that a deterioration of gettering efficiency of ions implanted directly into the back side of a semiconductor wafer occurs at 1100 degrees C. This is shown in the table below, wherein recovery time is measured as a function of annealing temperature: Anneal Temperature Gettered Wafer Half Control Half 900 degrees C 55.4 sec. 1.67 sec. 1000 degrees C 98.4 sec. 50.1 sec. 1100 degrees C 0.57 sec. 2.06 sec.