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Schottky Barrier Diode With Isolated Guard Ring

IP.com Disclosure Number: IPCOM000068581D
Original Publication Date: 1978-Jan-01
Included in the Prior Art Database: 2005-Feb-20

Publishing Venue

IBM

Related People

Authors:
Jambotkar, CG Wang, PP [+details]

Abstract

The reverse breakdown characteristics of a Schottky barrier diode can be improved by employment of a guard ring. A typical structure employs an N doped cathode body with a P diffused ring structure in its surface. A Schottky metal anode is deposited in such manner as to contact the surface of the anode body within the ring and to lap the ring. Such a guard ring acts to relieve the electric field near the Schottky periphery, and thus the reverse breakdown voltage is increased.