Browse Prior Art Database

Substrate Voltage Transient Reduction Circuit Disclosure Number: IPCOM000068589D
Original Publication Date: 1978-Jan-01
Included in the Prior Art Database: 2005-Feb-20

Publishing Venue


Related People

Bula, J Kurian, TJ Patrawala, AC [+details]


In a field-effect transistor read-only store (FET ROS) the substrate voltage transient is caused mainly by charging and discharging of the array. The voltage transient contribution due to switching off peripheral circuits is minimum. The proposed circuit balances the charges in and out of substrate voltage node due to array charging and discharging, thereby maintaining constant charge at the substrate node at all times. This reduces the substrate voltage bounce.