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No Field Oxide Single Device Cell Disclosure Number: IPCOM000068656D
Original Publication Date: 1978-Feb-01
Included in the Prior Art Database: 2005-Feb-20

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Coady, JH [+details]


Step 1. On a boron-doped substrate 10, with well-known techniques, deposit a layer of borosilicate glass 11, and coat it with a layer of silicon nitride 12. If the boron concentration of the glass is too critical for in situ doping during chemical vapor deposition, dope it with a low energy ion implantation.