Browse Prior Art Database

No Field Oxide Single Device Cell

IP.com Disclosure Number: IPCOM000068656D
Original Publication Date: 1978-Feb-01
Included in the Prior Art Database: 2005-Feb-20

Publishing Venue

IBM

Related People

Authors:
Coady, JH [+details]

Abstract

Step 1. On a boron-doped substrate 10, with well-known techniques, deposit a layer of borosilicate glass 11, and coat it with a layer of silicon nitride 12. If the boron concentration of the glass is too critical for in situ doping during chemical vapor deposition, dope it with a low energy ion implantation.