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Schottky Barrier Diode Structure and Conductor Metallurgy with Increased Electromigration Resistance Disclosure Number: IPCOM000068711D
Original Publication Date: 1978-Feb-01
Included in the Prior Art Database: 2005-Feb-20

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Chu, WK Howard, JK [+details]


U. S. Patent 4,017,890 discloses a way to improve electromigration performance of narrow line conductors with additions of Al-transition metal compounds. This article describes a method to prevent Al from penetrating Ta (Zr, Nb, Hf, Ti, Ni, Cr, etc.) in Schottky barrier diode structures, thus changing the barrier height. For the case of Al-Ta-Si, the barrier height of Ta (~0.5 eV) is changed by diffusion of Al to a barrier height near Al (0.62 eV) (see U. S. Patent 4,013,485).