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Schottky Barrier Diode

IP.com Disclosure Number: IPCOM000068712D
Original Publication Date: 1978-Feb-01
Included in the Prior Art Database: 2005-Feb-20

Publishing Venue

IBM

Related People

Authors:
Malavijya, SD Reith, TM Sullivan, MJ [+details]

Abstract

Etching a trench into silicon at the Schottky barrier diode (SBD) contacts lowers the effective series resistance because the series path through the silicon (usually relatively high resistivity epitaxy) is, shortened. Reliability, reproducibility and yield are preserved by not covering the sidewalls of the trench with the SBD metallization.