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This is an N channel FAMOS (floating avalanche metal oxide semiconductor) device that is alterable both electrically and optically.
English (United States)
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Page 1 of 2
Depletion Mode FAMOS Device
This is an N channel FAMOS (floating avalanche metal oxide
semiconductor) device that is alterable both electrically and optically.
Fig. 1 illustrates one version utilizing a single polycrystalline silicon layer.
The device is formed into a P-type substrate 10 with two N+ diffusions, as shown,
and a depletion implant 12 in the channel region. The substrate is covered by a
first silicon dioxide layer 14 which is followed by the polycrystalline silicon floating
gate 16. This is covered with an additional layer of oxide 18, which is then
covered by metal 20.
Fig. 2 shows an alternate version utilizing two layers of polycrystalline silicon.
The structural distinction between the two devices is that the top metal layer in
Fig. 1 has been replaced by a second layer of polycrystalline silicon 20'.
The device in Fig. 2 can be written by a unique optical technique which
reduces the write voltage below the junction avalanche voltage. The potential VG
is made greater than the potential VD, and the junction is illuminated with light.
Some of the incident light is absorbed into the channel depletion region 12 and
generates electron-hole pairs. Some of the electrons are injected into the gate
insulator and will charge the floating gate 16 negatively.
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