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This article describes an improved field-effect transistor (FET) driver circuit which employs depletion-mode FET load devices and capacitive bootstrapping.
English (United States)
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High Speed FET Driver
This article describes an improved field-effect transistor (FET) driver circuit
which employs depletion-mode FET load devices and capacitive bootstrapping.
The figure shows the circuit in which T3, T6 and T5 constitute a depletion-
mode load push-pull FET driver, wherein an input signal at the IN terminal will be
inverted at the output node A of the inverter comprised of the devices T1 and T3
and that signal controls the conductivity of the depletion-mode transistor T6,
while the input signal at the terminal IN is also applied to the active device T5 in
the output inverter comprised of the devices T6 and T5. If the input signal is an
on-signal and the node A drops in voltage, then it turns load device T6 off while
the device T5 is turning on, thereby causing a push-pull type of circuit response,
yielding a net inversion of the input signal at the output terminal OUT.
The magnitude of the signal at node B, applied to the gate of the depletion-
mode device T6, can be increased by the use of the bootstrapping circuit
comprising capacitor C1 and device T4. Device T4 supplies current to the node
B, raising its potential to an intermediate value of the drain potential V(D) minus
the threshold voltage for the device T4. To this voltage is added the signal
applied at the node A by the input inverter T1 and T3. This bootstrapping action
will turn the depletion-mode load device T6 on harder when the input signal IN is
an off-signal. Since T5 will be g...