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Light Sensitive Thin Film Metal Base Transistor

IP.com Disclosure Number: IPCOM000068823D
Original Publication Date: 1978-Feb-01
Included in the Prior Art Database: 2005-Feb-20

Publishing Venue

IBM

Related People

Authors:
Brodsky, MH Deneuville, A [+details]

Abstract

Fig. 1 shows a thin-film transistor structure. A thin-film ohmic contact 10 is deposited upon a substrate 9 composed of one or more layers. Contact 10 is preferably composed of a material such as indium/tin oxide which is coated with degenerately, heavily doped N+ hydrogenated amorphous silicon (a-Si:H) layer 18 about 1000 angstroms thick. The substrate 9 is composed of a material such as glass, plastic, silicon, fused quartz, crystalline silicon or other electrical insulator. Contact 10 may have a thickness on the order of 5000 angstroms.