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Condensed Gas, In Situ Lithography

IP.com Disclosure Number: IPCOM000068825D
Original Publication Date: 1978-Feb-01
Included in the Prior Art Database: 2005-Feb-20

Publishing Venue

IBM

Related People

Authors:
Johnson, WL Laibowitz, RB Tsuei, CC [+details]

Abstract

A lithographic method is disclosed which utilizes condensed gases as the resist material. Common gases such as Ar, N(2) and O(2), as well as some of the less common gases, can be used. The lithography uses these gases condensed at low temperatures in a vacuum system which is also a vapor deposition system for a wide variety of thin film materials e.g., metals, semiconductors and insulators. In this way, very clean in situ fabrication of thin film circuits and devices is obtained.