Partitioning E Beam Data for Proximity Corrections
Original Publication Date: 1978-Feb-01
Included in the Prior Art Database: 2005-Feb-20
This article presents an algorithm for solving, in part, a serious problem in small dimension (- 1 mu m) electron (E)-beam lithography, i.e,, the proximity effect problem. The proximity effect is due to the partial exposure of resist near a shape written by an E-beam due to electron scattering in the resist and substrate. As a consequence, a shape written near to the original one should have its exposure corrected because of the fact that some of the resist in which it is written has been partially exposed in writing the first shape. There are two aspects to the solution of this problem: 1. The second shape must be subdivided into two (or more) shapes so that it now consists of a shape which lies on unexposed resist and one which lies on the resist partially exposed by writing the original shape which preceded it. 2.