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This article describes a simple process for removing permanganate films from polyimide layers, resulting in increased adhesion of thin films to the surfaces of the polyimide layer.
English (United States)
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MNO(2) Removal Process
This article describes a simple process for removing permanganate films
from polyimide layers, resulting in increased adhesion of thin films to the surfaces
of the polyimide layer.
In the semiconductor industry, ceramic substrates 10 are used, for example,
to support semiconductor chips (not shown). To provide conductive paths,
different portions of the supported chip lines 11 are created on the surface of the
substrate 10 and coated with an insulation coating of polyimide 12. The lines 11
are comprised of layers of chrome 13, copper 14, and chrome 15.
To contact the coated chrome-copper-chrome lines, via holes 16 and 17 are
etched through the polyimide coating 12 by using the well-known hot potassium
hydroxide (KOH) process.
However, if one attempts to contact the exposed portion of the line 11 directly
without removing the uppermost chrome layer 13 of the chrome-copper-chrome
sandwich, a high resistance contact will result.
To achieve a low resistance contact, it is necessary to remove the uppermost
chrome layer 13 and contact the underlying copper layer 14. To remove this
uppermost chrome layer 13, a chrome etchant comprised of a 1O% aqueous
solution of potassium permanganate (KMnO(2)) and sodium hydroxide (NOH) is
used. However, during the etching of the uppermost chrome layer 13, there is a
chemical reaction between the potassium permanganate and the polyimide,
resulting in a nonwater soluble layer of permanganate being formed on the