Browse Prior Art Database

Memory Access Line

IP.com Disclosure Number: IPCOM000068872D
Original Publication Date: 1978-Mar-01
Included in the Prior Art Database: 2005-Feb-20

Publishing Venue

IBM

Related People

Authors:
Chakravarti, SN Silverman, R Vogl, NG [+details]

Abstract

In random-access and read-only memories, particularly in one-device cell memories, elongated diffusions formed in the semiconductor substrate are often used as accessing lines, e. g., bit/sense lines. To provide an accessing line with a conductivity considerably greater than the conductivity obtainable from such diffusions, a high conductivity metal silicide is formed over and in contact with the elongated diffusions or diffused lines.