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Impact Sound Stressing Rotator

IP.com Disclosure Number: IPCOM000068910D
Original Publication Date: 1978-Mar-01
Included in the Prior Art Database: 2005-Feb-20

Publishing Venue

IBM

Related People

Authors:
Dessauer, RG Schwuttke, GH [+details]

Abstract

The damage zone on 2-1/4'' and 3-1/4'' diameter wafers treated by the usual impact sound stressing (ISS) equipment is restricted to a central area of about 1'' to 1-1/8'' in diameter. This is due to the character of the method and apparatus as well as the vibrational properties of the silicon wafers.