Impact Sound Stressing Rotator
Original Publication Date: 1978-Mar-01
Included in the Prior Art Database: 2005-Feb-20
The damage zone on 2-1/4'' and 3-1/4'' diameter wafers treated by the usual impact sound stressing (ISS) equipment is restricted to a central area of about 1'' to 1-1/8'' in diameter. This is due to the character of the method and apparatus as well as the vibrational properties of the silicon wafers.