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This article describes a coupling structure between one or more semiconductor chips and a protective enclosure to greatly improve the removal of dissipated heat.
English (United States)
This text was extracted from a PDF file.
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This is the abbreviated version, containing approximately
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Resilient Thermal Coupler for Semiconductor Chips
This article describes a coupling structure between one or more
semiconductor chips and a protective enclosure to greatly improve the removal of
The semiconductor chip G is reflow joined to a substrate H, using a suitable
array of controlled collapse interconnections J. The top surface of the chip is
prepared so as to allow direct bonding to the spreading element C. This element
is designed to be retained within the enclosing cap A by suitably located dimples F. The knitted wire mesh pad B is captive between the surfaces of the cap A and
the spreader element C. The captive surfaces are electroless tin/lead plated and
reflowed to the contact points of the wire mesh pad B. A thin sintered diamond
element E is mechanically embedded or bonded to the spreader element C. The
thin sintered diamond layer electrically isolates the semiconductor chip and
provides an interface of high thermal conductivity.
To offset the weight and stored energy within the wire mesh pad, a peripheral
elastomeric sealing member D, of suitable geometry, is interposed between the
substrate and a recess of the spreader element. The resulting pressure
differential on the chip is calculated to remain within the allowable force on the
chip interconnecting pads over the range of variation in chip height. At reflow,
the peripheral support supplied by the sealing member D to the spreader element
C helps maintain the chip parallel with...