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Selection of Silicon Wafers with Acceptable Yield Potential by X-Ray Transmission Measurements Disclosure Number: IPCOM000068929D
Original Publication Date: 1978-Mar-01
Included in the Prior Art Database: 2005-Feb-20

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Malin, K Mirbach, E Thiel, K [+details]


The presence, density, and distribution of SiO(2) precipitations in silicon wafers have a distinct influence on the leakage-limited yield potential of such wafers. To screen out wafers with a low yield potential, the following method is used.