SIMS Analysis of Overlapping Implanted Doping Profiles
Original Publication Date: 1978-Mar-01
Included in the Prior Art Database: 2005-Feb-20
Semiconductor devices sometimes require doping profiles in which regions with the same dopant are adjacent or even overlapping; such structures may be readily fabricated by ion implantation which leads to sharply defined profile boundaries. The profile boundaries, however, are subject to changes occurring in subsequent high-temperature process steps (e.g., annealing, additional diffusions).