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SIMS Analysis of Overlapping Implanted Doping Profiles

IP.com Disclosure Number: IPCOM000068934D
Original Publication Date: 1978-Mar-01
Included in the Prior Art Database: 2005-Feb-20

Publishing Venue

IBM

Related People

Authors:
Hinkel, H Kempf, J Schmitt, A [+details]

Abstract

Semiconductor devices sometimes require doping profiles in which regions with the same dopant are adjacent or even overlapping; such structures may be readily fabricated by ion implantation which leads to sharply defined profile boundaries. The profile boundaries, however, are subject to changes occurring in subsequent high-temperature process steps (e.g., annealing, additional diffusions).