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Fabrication of Power Transistors Disclosure Number: IPCOM000068938D
Original Publication Date: 1978-Mar-01
Included in the Prior Art Database: 2005-Feb-20

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Jambotkar, CG Wang, PP [+details]


Transistors fabricated in accordance with this method have a pedestal emitter on a planar base with the base metalization extending close to the emitter base junction at the foot of the pedestal. Thus, the usual extrinsic base region and extrinsic base resistance are minimized, and the sidewall component of the emitter-base junction is virtually eliminated.