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Lift Off Technique Employing Photoresist with Dual Etch Rate Disclosure Number: IPCOM000068953D
Original Publication Date: 1978-Mar-01
Included in the Prior Art Database: 2005-Feb-20

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Related People

Alcorn, GE Audet, LA Feeley, JD Keeney, HE Lyman, JT Stephens, GB [+details]


An improved technique is disclosed for the formation of a lift-off photoresist having an overhanging lip. The upper surface of the photoresist is hardened by ionizing radiation so that the optically exposed region will etch more slowly at the upper surface than in the bulk of the photoresist, thereby forming an overhanging lip suitable for lift-off techniques.