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Tunnel Junction with Low Capacitance

IP.com Disclosure Number: IPCOM000069037D
Original Publication Date: 1978-Mar-01
Included in the Prior Art Database: 2005-Feb-20

Publishing Venue

IBM

Related People

Authors:
Caswell, HL Chaudhari, P Kircher, CJ Laibowitz, RB Raider, SI Tsuei, CC [+details]

Abstract

Niobium metallurgy offers a number of reliability advantages over Pb base materials for use as electrodes for Josephson tunneling devices. It also suffers from several disadvantages. A principal one is that the capacitance of junctions formed on Nb is approx. 3x larger than for junctions formed on Pb-In alloys due primarily to the high dielectric constant of Nb(2)O(5).