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Incorporating Atomic Hydrogen in Evaporated Silicon Films

IP.com Disclosure Number: IPCOM000069042D
Original Publication Date: 1978-Mar-01
Included in the Prior Art Database: 2005-Feb-20

Publishing Venue

IBM

Related People

Authors:
Campbell, DR McGroddy, JC [+details]

Abstract

A technique has been developed for combining an evaporant stream of silicon (Si) with atomic hydrogen (H, H/+/), the hydrogen being provided by either a radio frequency discharge or direct current discharge of molecular hydrogen. This process is different from existing processes for making hydrogen containing Si films, which generally require either the dissociation of silane or sputtering a solid Si target to provide the Si.