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Fabrication of Conductive Refractory Silicide Doped Polysilicon Lines Disclosure Number: IPCOM000069045D
Original Publication Date: 1978-Mar-01
Included in the Prior Art Database: 2005-Feb-20

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Baglin, JE Crowder, BL Hammer, WN Zirinsky, S [+details]


Homogeneous refractory metal silicide-doped polysilicon lines for integrated circuit use may be made by depositing over the polysilicon the silicon source in layers, with the refractory metal between, for simultaneous interdiffusion. In the case of WSi(2) on a volume basis, the Si should be 2.5 times the W, with one-half the Si coming from the upper film and the other half coming from the lower film. The lower Si source may be in the range of 1000 Angstroms, the refractory metal layer may be approximately one-half the final thickness based on the density ratio of WSi(2) to Si of 9.8/2.3, and the upper Si layer nay be of any practical thickness above 100 Angstroms.