Lithography Wafer Processing Real Time Control
Original Publication Date: 1978-Apr-01
Included in the Prior Art Database: 2005-Feb-20
In lithography wafer processing, detection of the end-point of processing (PEPD) can be used to compensate for thin film thickness and etch rate (temperature, concentration, etc.) batch-to-batch variations. Also, the completion of the process within the test site is detected by PEPD. However, for optimum processing, it requires an additional process time `delta t' to account for variations so as to achieve the proper line widths with tighter tolerance control.