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Self Actuating Refresh Scheme for Dynamic Memories

IP.com Disclosure Number: IPCOM000069143D
Original Publication Date: 1978-Apr-01
Included in the Prior Art Database: 2005-Feb-20

Publishing Venue

IBM

Related People

Authors:
Johnson, RE [+details]

Abstract

A dynamic memory cell will store charge (a bit of information) for a limited amount of time due to the leakages associated with the particular cell design. Consequently, the cell must be refreshed (recharging of the cell to its full initial condition) before it discharges to the point where the information is lost. Existing refresh schemes depend on the charge being present for a fixed amount of time after the last refresh, and refreshing after this fixed time period. This time period is determined by calculating and measuring the storage time and then including some safety margin to insure refreshing before data is lost. In addition, it is to be noted that a cell is automatically refreshed whenever it is read or written.