Browse Prior Art Database

Producing Contacts for Integrated Semiconductor Devices Disclosure Number: IPCOM000069162D
Original Publication Date: 1978-Apr-01
Included in the Prior Art Database: 2005-Feb-20

Publishing Venue


Related People

Briska, M [+details]


To ensure full coverage of a contact area with contact metal evaporated through a mask, the deposited metal is scattered by bombardment with an ion beam until a homogeneous layer over the contact area is obtained.