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Producing Contacts for Integrated Semiconductor Devices

IP.com Disclosure Number: IPCOM000069162D
Original Publication Date: 1978-Apr-01
Included in the Prior Art Database: 2005-Feb-20

Publishing Venue

IBM

Related People

Authors:
Briska, M [+details]

Abstract

To ensure full coverage of a contact area with contact metal evaporated through a mask, the deposited metal is scattered by bombardment with an ion beam until a homogeneous layer over the contact area is obtained.