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Transition Metal Oxide Conductors in Integrated Circuits

IP.com Disclosure Number: IPCOM000069259D
Original Publication Date: 1978-Apr-01
Included in the Prior Art Database: 2005-Feb-20

Publishing Venue

IBM

Related People

Authors:
Armstrong, JA Shafer, M [+details]

Abstract

Transition-metal oxides with the rutile-type structure can be substituted for the metals currently used in conductive lines which serve to connect components of semiconductor devices. Typical examples of these oxides as well as their resistivities at room temperature and at 77 Degrees K are listed in the following table. Resistivity of Transition Metal Oxides in Microhm-cm Oxide 300 Degrees K 77 Degrees K *MoO(2) 80 3.5 RuO(2) 40 1 RhO(2) 100 - OsO(2) 60 2.5 IrO(2) 60 2.5 *PtO(2) approximately 10 - Cu 1.7 0.9 Mo 6 4 Au 2.5 1.