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This article describes a process for generating lines as narrow as 5 Angstroms which are separated by as little as 5 Angstroms.
English (United States)
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Process for Generating Fine Lines
This article describes a process for generating lines as narrow as 5
Angstroms which are separated by as little as 5 Angstroms.
Light ions accelerated to several MeV and incident upon an orientated major
crystallographic axis will penetrate many microns of crystalline material and
emerge from the rear well collimated. In the case when a silicon crystal is
employed and is orientated to produce planar channelling, it is possible to obtain
a pattern of extremely narrow parallel rows of collimated ions emerging from the
crystal. The width of these rows is approximately 5 Angstroms.
The spacing of the resulting pattern of collimated ions emerging from a
crystal may be altered by epitaxially growing a second crystal of slightly different
atomic spacing atop the first crystal. When such a composite crystal or bicrystal
is used, the ions will be most effectively transmitted through the bicrystal where
the channels of the two crystals align. The alignment will occur at selected
multiples of the interplanar spacings of the two crystals. The figure schematically
illustrates how the bicrystal described above can be used to selectively transmit
ions. The crystal will allow the passage of ions along path A where the channels
in crystals I and II are aligned. The bicrystal prevents the passage of ions along
path B where the alignment is poor. The intensity of the transmitted ions should
go from a maximum to a minimum periodically.