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Masking Technique for Reactive Ion Etching

IP.com Disclosure Number: IPCOM000069326D
Original Publication Date: 1978-Apr-01
Included in the Prior Art Database: 2005-Feb-20

Publishing Venue

IBM

Related People

Authors:
Bondur, JA [+details]

Abstract

Reactive ion etching of openings in insulating layers of nitride and oxide using block-out masks is achieved without thinning of the nitride when defining fine geometry patterns.