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Schottky Diode with Reduced Series Resistance

IP.com Disclosure Number: IPCOM000069337D
Original Publication Date: 1978-Apr-01
Included in the Prior Art Database: 2005-Feb-20

Publishing Venue

IBM

Related People

Authors:
Anantha, NG Bhatia, HS Eardley, DB [+details]

Abstract

The device illustrated in the drawing is formed by isolating regions of monocrystalline silicon with silicon dioxide dielectric walls 3 by one of the several techniques available. The reactive ion etching method is used to remove the region Z(1) of the N type epitaxial silicon layer where the anode metal for the Schottky barrier diode is to be formed. This leaves the region Z of N(2) type epitaxial silicon over N+ subcollector region 4. An N+ diffusion is made into the silicon surface where the cathode contact is to be made to form an N+ region 5. The anode contact 6 and cathode contact 7 are formed onto the surface of the device by conventional blanket metal deposition, photolithography and etching techniques.