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Determining the Etching End Point of Photoresist During Reactive Ion Etching

IP.com Disclosure Number: IPCOM000069342D
Original Publication Date: 1978-Apr-01
Included in the Prior Art Database: 2005-Feb-20

Publishing Venue

IBM

Related People

Authors:
Daley, JE Havas, J Rompala, LJ Melhado, RL [+details]

Abstract

This technique ensures the complete removal of photoresist during a reactive ion etching (RIE) removal process. It also provides for the monitoring and control of overetching so as to avoid ledges or undercut in materials disposed below the resist.