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Very low forward Schottky barrier diodes (SBDs) can be fabricated by using a silicon/polysulfone lift-off structure capable of withstanding RF deposition temperatures. The structure is shown in Fig. 1.
English (United States)
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Low Barrier Height Schottky Barrier Diodes by Metal RF Sputter Deposition
Very low forward Schottky barrier diodes (SBDs) can be fabricated by using
a silicon/polysulfone lift-off structure capable of withstanding RF deposition
temperatures. The structure is shown in Fig. 1.
In the next operation, 500 Angstroms of RF-deposited tantalum is deposited
in contact with the epi, followed by an in situ RF-deposited Ti-W (10% Ti) film
1000 Angstroms thick. 8500 Angstroms of Al-Cu is then deposited, e.g., in
another system, as by evaporation. An SBD test pattern with small contact holes
is used. The 0.3-mil contact hole is electrically characterized, with data given in
the table below. After fabrication, the structure is shown in Fig. 2.
RGA data for this deposition indicates that this system is methane (CH(4))
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