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Low Barrier Height Schottky Barrier Diodes by Metal RF Sputter Deposition Process

IP.com Disclosure Number: IPCOM000069348D
Original Publication Date: 1978-Apr-01
Included in the Prior Art Database: 2005-Feb-20

Publishing Venue

IBM

Related People

Authors:
Totta, PA White, JF Zielinski, LB [+details]

Abstract

Very low forward Schottky barrier diodes (SBDs) can be fabricated by using a silicon/polysulfone lift-off structure capable of withstanding RF deposition temperatures. The structure is shown in Fig. 1.