Lift Off Compatible All Sputter Process
Original Publication Date: 1978-Apr-01
Included in the Prior Art Database: 2005-Feb-20
This article describes a Schottky barrier diode (SBD) in situ sputter process which is compatible with high temperature lift-off. (High temperature lift-off is all-polysulfone with SiO cap, see U. S. Patent 3,985,597, and can withstand 300 Degrees C and may be able to withstand 340 Degrees C).