Browse Prior Art Database

Forming Junctions in Polycrystalline Solar Cells

IP.com Disclosure Number: IPCOM000069429D
Original Publication Date: 1978-Apr-01
Included in the Prior Art Database: 2005-Feb-20

Publishing Venue

IBM

Related People

Authors:
Campbell, DR Cheng, LJ [+details]

Abstract

An improved method for forming junctions in polycrystalline solar cells has been developed that does not result in any degradation of the minority carrier barriers. These barriers are produced by prior low temperature diffusive processes which result in the grain boundary of the cell being doped with the majority-type carriers [*]. The customary high-temperature intrinsic diffusion methods for forming solar cell junctions will result in compensation of the minority carrier barriers.