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Hydrogenation and Doping of Amorphous GaAs and Semiconductor Devices Made Therefrom

IP.com Disclosure Number: IPCOM000069433D
Original Publication Date: 1978-Apr-01
Included in the Prior Art Database: 2005-Feb-20

Publishing Venue

IBM

Related People

Authors:
Brodsky, MH Cuomo, JJ Woolhouse, GR [+details]

Abstract

Amorphous semiconductors of the tetrahedrally bonded type (e.g., Si, Ge, GaAs, GaP and InSb) have not been generally useful materials for conventional semiconductor devices. Their lack of conventional device suitability stems from the large number of electronic states associated with defects in or deviations from the idealized conceptual continuous network of atoms chemically bonded in a way that preserves a large degree of short range order [1].